By Topic

Electrothermal Characterization for Reliability of Modern Low-Voltage PowerMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Castellazzi, A. ; Swiss Fed. Inst. of Technol., Zurich ; Ciappa, M.

This paper deals with the experimental characterization of modern semiconductor devices under realistic operational conditions. First, a method for monitoring their thermal evolution as a response to transient electrical stimuli is presented. The proposed solution belongs in the category of optical infrared methods and offers good time and space resolution. In line with the requirements of leading-edge research and development activities, it is also characterized by a high-degree of versatility, which makes it a powerful tool in many diverse lines of investigations. Then, examples of the critical operation of modern-generation low-voltage power transistors are discussed. The cases proposed are selected from an actual application scenario and well demonstrate, on the one side, the need for accurate characterization of the components and, on the other side, the validity of the chosen solution.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:7 ,  Issue: 4 )