By Topic

Electron energy spectroscopy and the observation of ballistic transport of hot electrons in the plane of a 2DEG

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Palevski, A. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Heiblum, M.

The authors report the first successful fabrication of a lateral hot-electron transistor. Using energy spectroscopy, they have demonstrated the existence of ballistic transport in the plane of a 2DEG. The structure has been made by deposition of two metallic gates, each some 50 nm long, separated by 80-200 nm, on a selectively doped high-mobility GaAs/AlGaAs heterostructure. By applying negative bias to the gates, two potential barriers were formed under them that divided the plane into three regions-injection, transport, and collection-all contacted with ohmic contacts. One barrier served as a tunneling injector while the other played the role of the spectrometer. Operating the device as a hot-electron theta device and performing energy spectroscopy, hot-electron distributions, no more than 5 meV wide, were measured at the collector.

Published in:

Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 11 )