Skip to Main Content
In this paper, we report a top gate SWNT-FET with reduced hysteresis in the IV characteristics and extremely low 1/f noise. We have also investigated the source of 1/f noise in these devices and attributed the low noise property to low trap charges near the carbon nanotube substrate interface. The SWNT-FET devices reported here and shown schematically in Fig. 1(a), are fabricated on high resistivity Si substrate (rhoap10 KOmega) with a 500 nm thermal SiO2. Catalyst patterns are defined by UV photolithography with a 10 mum spacing and subsequent iron deposition and lift-off. Single-walled carbon nanotubes (SWNTs) are then synthesized by chemical vapor deposition (CVD) of methane on the substrate using iron catalyst.