By Topic

The study of low frequency noise of single-walled carbon nanotube transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sunkook Kim ; Purdue Univ., West Lafayette ; Chang, D. ; Yi Xuan ; Peide Ye
more authors

In this paper, we report a top gate SWNT-FET with reduced hysteresis in the IV characteristics and extremely low 1/f noise. We have also investigated the source of 1/f noise in these devices and attributed the low noise property to low trap charges near the carbon nanotube substrate interface. The SWNT-FET devices reported here and shown schematically in Fig. 1(a), are fabricated on high resistivity Si substrate (rhoap10 KOmega) with a 500 nm thermal SiO2. Catalyst patterns are defined by UV photolithography with a 10 mum spacing and subsequent iron deposition and lift-off. Single-walled carbon nanotubes (SWNTs) are then synthesized by chemical vapor deposition (CVD) of methane on the substrate using iron catalyst.

Published in:

Device Research Conference, 2007 65th Annual

Date of Conference:

18-20 June 2007