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High performance In2O3 nanowire transistors using organic gate nanodielectrics

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7 Author(s)

In this study, we report high performance nanowire transistors using individual in 203 nanowires as channels, a multilayer self-assembled organic nano-dielectric (SAND) as the gate insulator (thickness -15 nm, capacitance -180 nF/cm2, and leakage current density ~1x10-6 A/cm2 up to 2 V). The NWTs use an individually addressable indium zinc oxide (IZO) bottom-gate and Al source/drain electrodes.

Published in:

Device Research Conference, 2007 65th Annual

Date of Conference:

18-20 June 2007