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Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study

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2 Author(s)
Yijian Ouyang ; Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, Tel: 352-392-0940, yijianoy@ufl.edu ; Jing Guo

In this work, we simulated the intrinsic dynamic conductance matrix of ballistic CNTFETs using the time-dependent non-equilibrium Green's function (NEGF) formalism.4'5 Plasmon wave propagation along ballistic metallic CNT interconnects is also studied.

Published in:

2007 65th Annual Device Research Conference

Date of Conference:

18-20 June 2007