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Based on the complex bandstructure obtained by local empirical pseudopotential method (LEPM), we have developed a band to band tunneling model (BTBT), which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states. Theoretical model is verified by experimental study on tunnel diodes on various semiconductors. BTBT leakage current in high mobility (mu) channel double gate FET is studied. We have shown that quantum confinement effect in DGFET can suppress BTBT leakage current.
Device Research Conference, 2007 65th Annual
Date of Conference: 18-20 June 2007