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3X hole mobility enhancement in epitaxially grown SiGe PMOSFETs on (110) Si substrates with high k / metal gate for hybrid orientation technology

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11 Author(s)
Joshi, S. ; Univ. of Texas at Austin, Austin ; Dey, S. ; Se-Hoon Lee ; Krug, C.
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MOSFETs were fabricated on both thick and thin epi SiGe films. An ultra thin (~ 1- 2 nm) epi Si cap grown on the SiGe layers serves to separate the Ge from the high k dielectric as well as form a SiO2 interfacial layer between the SiGe channel and the high k gate dielectric. There is evidence that this cap layer is completely oxidized during the ozone based ALD high k deposition process. Both epitaxial Si as well as SiO2 based capping layers are reported to improve the interface for pure Ge devices. PMOSFETs were fabricated using a conventional 4 mask step process flow using a deposited field isolation oxide, ALD high k, metal gate electrode and implanted source/drain regions.

Published in:

Device Research Conference, 2007 65th Annual

Date of Conference:

18-20 June 2007