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A planar resonant-tunneling field-effect transistor

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3 Author(s)
Ismail, K. ; MIT, Cambridge, MA, USA ; Antoniadis, D.A. ; Smith, H.I.

Summary form only given. The authors report on the fabrication of double-barrier planar resonant-tunneling field-effect transistors. The layers used are modulation-doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. The devices can be operated in a regular FET mode by lowering the gate-induced barriers below the Fermi energy. A clear oscillatory behavior of the source-drain current IDS as a function of gate bias VGS below threshold can be observed at 4.2 K, with both gates connected together, a manifestation of resonant tunneling.

Published in:

Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 11 )

Date of Publication:

Nov 1989

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