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Summary form only given. The authors report on the fabrication of double-barrier planar resonant-tunneling field-effect transistors. The layers used are modulation-doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. The devices can be operated in a regular FET mode by lowering the gate-induced barriers below the Fermi energy. A clear oscillatory behavior of the source-drain current IDS as a function of gate bias VGS below threshold can be observed at 4.2 K, with both gates connected together, a manifestation of resonant tunneling.