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Monolithically integrated InGaAs p-i-n InP-MISFET PINFET grown by chloride vapor phase epitaxy

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6 Author(s)
Antreasyan, A. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Garbinski, P.A. ; Mattera, V.D., Jr. ; Temkin, H.
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Summary form only given. The authors report the monolithic integration of an InGaAs p-i-n detector with an InP metal-insulator-semiconductor field-effect transistor (MISFET) with fT=29 GHz for a 1- mu m gate length. The monolithically integrated p-i-n detectors are characterized by leakage currents of about 1 nA at a reverse bias of up to 10 V. The MISFETs had extrinsic gm values of 200 mS/mm for a 1- mu m gate length. The gate-to-source leakage current of the MISFETs was below 100 nA up to a 1.8-V forward bias. Bit-error measurements at a wavelength of 1.55 mu m demonstrated PINFET receiver sensitivities of -34.1 and -25.4 dBm at 200 and 600 Mb/s, respectively. Preliminary measurements at 2 Gb/s show a receiver sensitivity of -20.0 dBm.

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Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 11 )