Cart (Loading....) | Create Account
Close category search window
 

Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Offsey, S.D. ; Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; Schaff, W.J. ; Tasker, P.J. ; Eastman, L.F.

Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate-confinement heterostructure single-quantum-well lasers were grown by molecular-beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 mu m at 300 K, have threshold currents of 12 mA for 3 mu m*400 mu m devices, and have average threshold current densities of 174 A/cm2 for 40 mu m*800 mu m devices. Studies of threshold current versus cavity length and width agree with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular-beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor-phase epitaxy. Although these devices have not been optimized for microwave modulation, 4-GHz bandwidths have been measured for 21.5 mu m*600 mu m devices.

Published in:

Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 11 )

Date of Publication:

Nov 1989

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.