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High performance AlInAs/GaInAs HBTs for high speed, low power digital circuits

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7 Author(s)
Farley, C.W. ; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA ; Chang, M.F. ; Asbeck, P.M. ; Wang, K.C.
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Summary form only given. The authors describe high-performance single-heterojunction (SH) and double-heterostructure (DH) AlInAs/GaInAs HBTs (heterojunction bipolar transistors) for low-power digital circuits. They report record results in both DC and RF performance of AlInAs/GaInAs HBTs and circuits, including the highest unity current gain frequency, ft=78 GHz, reported for AlInAs/GaInAs HBTs, and a divide-by-four frequency divider operating up to a frequency of 17.1 GHz with a total power consumption of only 67 mW.

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Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 11 )