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Monitoring and diagnosis of plasma etch processes

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3 Author(s)
Dolins, S.B. ; Texas Instrum. Inc., Dallas, TX, USA ; Srivastava, A. ; Flinchbaugh, B.E.

Plasma etching removes material from a silicon wafer by applying power and gases in a chamber. As material is removed from a wafer, the amount of particular chemicals given off can be measured; this technique is called emission spectroscopy and the measurements are called endpoint traces. An expert system that automatically interprets the traces has been designed and built. The system combines signal-to-symbol transformations for data abstraction and rule-based reasoning for diagnosis. The system detects problems as soon as they occur and also determines their causes

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:1 ,  Issue: 1 )