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WNx diodes on plasma-treated GaAs surfaces

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5 Author(s)
A. Paccagnella ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; A. Callegari ; N. Braslau ; H. Hovel
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The formation of WNx Schottky diodes on GaAs surfaces with various interface conditions was investigated by performing H2- and N2-plasma treatments on GaAs surfaces prior to the WNx film deposition. After annealing at 810 degrees C for 10 min, an improvement in the diode rectifying characteristics was generally observed, resulting from the thermal recovery of the sputtering and plasma-induced damage. The maximum Phi I-V=0.76 eV was obtained for the H2-plasma-treated diodes. Samples with an N2-plasma-treated interface showed a reduced barrier height and a higher ideality factor with corresponding nonlinearity in the C-V curves due to the presence of a high density of interfacial states.

Published in:

IEEE Transactions on Electron Devices  (Volume:36 ,  Issue: 11 )