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The formation of WNx Schottky diodes on GaAs surfaces with various interface conditions was investigated by performing H2- and N2-plasma treatments on GaAs surfaces prior to the WNx film deposition. After annealing at 810 degrees C for 10 min, an improvement in the diode rectifying characteristics was generally observed, resulting from the thermal recovery of the sputtering and plasma-induced damage. The maximum Phi I-V=0.76 eV was obtained for the H2-plasma-treated diodes. Samples with an N2-plasma-treated interface showed a reduced barrier height and a higher ideality factor with corresponding nonlinearity in the C-V curves due to the presence of a high density of interfacial states.