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A Physical Model on Scattering at High-κ Dielectric/SiO2 Interface of SiGe p-MOSFETs

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4 Author(s)
Zhang, X.F. ; Huazhong Univ. of Sci. & Technol., Wuhan ; Xu, J.P. ; Lai, P.T. ; Li, C.X.

In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/near the high- K dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and permittivities of the high- dielectric and interlayer on the hole mobility are discussed.

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 11 )

Date of Publication:

Nov. 2007

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