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We investigated the effect of dopant profile engineering in planar MOSFETs, in which activation annealing was done using only nonmelt laser spike annealing (LSA). Device performance was 10% and 20% better compared to that when conventional LSA and rapid thermal annealing (RTA) are used, respectively. We achieved this by reengineering the following: 1) angle implantation in the extension of an nFET; 2) germanium preamorphization implantation in the extension of a pFET; 3) halo implantation with lower energy and smaller tilt angle; 4) deep source/drain by two-step implantation, and 5) counter implantation adjusted to the halo conditions. Hot carrier degradation was also reduced to an RTA-comparable level by halo profile engineering. Thus, we show that a submillisecond LSA is a promising technique for the fabrication of ultrashallow junctions for the 45-nm technology node and beyond and that a dopant profile engineering taking into account the minimal diffusion length of LSA is required to bring out the best device performance.