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Two-dimensional electric-field and avalanche breakdown calculations are presented for trench MOS capacitors operated in deep depletion. Breakdown calculations are based on the ionization-integral approach, with field values resulting from solutions of Poisson's equation. Plots of breakdown voltage versus background impurity concentration, oxide thickness, and trench width are provided, which are recommended for first-order engineering calculations of semiconductor structures involving the deeply depleted trench capacitor as a breakdown-voltage-setting component. Calculations cover the range of 1014 to 1018 cm-3 background impurity concentration and 0.01 to 5 mu m oxide thickness and apply to well-separated (i.e. noninteracting) rectangular trenches with widths equal to or larger than 0.2 mu m.