By Topic

Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jarndal, A. ; Comput. Eng. Dept., Hodeidah Univ., Hodeidah, Yemen ; Kompa, G.

In this paper, an accurate table-based large-signal model for AlGaN/GaN HEMTs accounting for trapping- and self-heating-induced current dispersion is presented. The B-spline-approximation technique is used for the model-element construction, which improves the intermodulation-distortion (IMD) simulation. The dynamic behavior of the trapping and self-heating processes is taken into account in the implementation of the model. The model validity is verified by comparing the simulated and measured outputs of the device tested under pulsed and continuous large-signal excitations for devices of 1-mm gate width. Single- and two-tone simulation results show that the model can efficiently predict the output power and its harmonics and the associated IMD under different input-power and bias conditions.

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 11 )