By Topic

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Boulay, S. ; Manchester Univ., Manchester ; Touati, S. ; Sar, A.A. ; Hoel, V.
more authors

AlGaN/GaN high-electron mobility transistors on (001)-oriented silicon substrates with a 0.1-mum gamma-shaped gate length are fabricated. The gate technology is based on a silicon nitride (SiN) thin film and uses a digital etching technique to perform the recess through the SiN mask. An output current density of 420 mA/mm and an extrinsic transconductance gm of 228 mS/mm are measured on 300-mum gate-periphery devices. An extrinsic cutoff frequency ft of 28 GHz and a maximum oscillation frequency fmax of 46 GHz are deduced from S-parameter measurements. At 2.15 GHz, an output power density of 1 W/mm that is associated to a power-added efficiency of 17% and a linear gain of 24 dB are achieved at VDS = 30 V and VGS = -1.2 V.

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 11 )