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High-Performance Short-Channel Double-Gate Low-Temperature Polysilicon Thin-Film Transistors Using Excimer Laser Crystallization

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7 Author(s)

In this letter, high-performance low-temperature polysilicon thin-film transistors (TFTs) with double-gate (DG) structure and controlled lateral grain growth have been demonstrated by excimer laser crystallization. Via a proper excimer laser condition, along with the a-Si step height beside the bottom gate, a superlateral growth of Si was formed in the channel length plateau. Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics, as compared with the conventional top-gate ones. The proposed DG TFTs (W/L = 1/1 mum) had the field-effect mobility exceeding 550 cm2/Vmiddots, an on/off current ratio that is higher than 108, superior short-channel characteristics, and higher current drivability. In addition, the device-to-device uniformity could be improved since grain growth could be artificially controlled by the spatial plateau structure.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 11 )