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Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current

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5 Author(s)

We demonstrate Si ion-implanted GaN/AlGaN/GaN high-electron mobility transistors with extremely low gate leakage current and low source resistance without any recess etching process. The source/drain (S/D) regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into S/D regions with an energy of 80 keV, the performances were significantly improved. On-resistance decreased from 26.2 to 4.3 Omegaldrmm. Saturation drain current and maximum transconductance increased from 284 to 723 mA/mm and from 48 to 147 mS/mm.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 11 )

Date of Publication:

Nov. 2007

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