Referenced Items are not available for this document.
The performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.
Published in:
Electron Device Letters, IEEE
(Volume:28
,
Issue:
11
)
Date of Publication: Nov. 2007
- Page(s):
- 948 - 950
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9671393
- Digital Object Identifier :
- 10.1109/LED.2007.908490
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 29 October 2007
- Issue Date :
- Nov. 2007
- Sponsored by :
- IEEE Electron Devices Society
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