Referenced Items are not available for this document.
InAs-GaSb strain layer superlattice p+-n--n avalanche photodiodes (APDs) are fabricated using a newly introduced electron-beam aided zinc sulfide deposition. Temperature-dependent measurements were performed on 300 times 300 mum2 mesa etched APDs. The effect of passivation was also studied on the diode characteristics and APD performances. Temperature-dependent gain strongly correlates with avalanche mechanism.
Published in:
Photonics Technology Letters, IEEE
(Volume:19
,
Issue:
22
)
Date of Publication: Nov.15, 2007
- Page(s):
- 1843 - 1845
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 9675408
- Digital Object Identifier :
- 10.1109/LPT.2007.908726
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 29 October 2007
- Issue Date :
- Nov.15, 2007
- Sponsored by :
- IEEE Photonics Society
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