Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice

InAs–GaSb strain layer superlattice p$^{+}$ -n$^{-}$-n avalanche photodiodes (APDs) are fabricated using a newly introduced electron-beam aided zinc sulfide deposition. Temperature- dependent measurements were performed on 300 $\,\times\,$300 $\mu$m $^{2}$ mesa etched APDs. The effect of passivation was also studied on the diode characteristics and APD performances. Temperature-dependent gain strongly correlates with avalanche mechanism.