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Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice

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5 Author(s)
Mallick, S. ; Lab. for Photonics & Spintronics, Chicago ; Banerjee, K. ; Ghosh, S. ; Rodriguez, J.B.
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InAs-GaSb strain layer superlattice p+-n--n avalanche photodiodes (APDs) are fabricated using a newly introduced electron-beam aided zinc sulfide deposition. Temperature-dependent measurements were performed on 300 times 300 mum2 mesa etched APDs. The effect of passivation was also studied on the diode characteristics and APD performances. Temperature-dependent gain strongly correlates with avalanche mechanism.

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Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 22 )