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Shadowing effects due to tilted arsenic source/drain implant

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4 Author(s)
Krieger, G. ; VLSI Technol. Inc., San Jose, CA, USA ; Spadini, G. ; Cuevas, P.P. ; Schuur, J.

The extent of n+ source/drain implant shadowing by the LDD (lightly doped drain) oxide sidewall spacer was studied for the commonly used 7 degrees wafer-to-implant beam tilt. A clear asymmetry in substrate current characteristics was observed between normal and reverse polarity, despite the use of 0 degrees tilt for the n- LDD implant. The results suggest that 0 degrees tilt should be used for both n- (LDD) and n+ (source/drain) implants.

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Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 11 )