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Influence of Medium Dose Rate X and Gamma Radiation and Bias Conditions on Characteristics of Low-Dropout Voltage Regulators with Lateral and Vertical Serial PNP Transistors

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3 Author(s)
Vukic, V. ; Inst. of Electr. Eng. Nikola Tesla, Beograd ; Osmokrovic, P. ; Stankovic, S.

Voltage regulators were exposed to the influence of medium dose rate X and gamma radiation, in two modes: without bias, and with bias and load Examined integrated circuits are representatives of low-dropout voltage regulators with lateral and vertical PNP transistor: LM2940 and L4940. Results of the experiment, including the change of serial transistor dropout voltage and maximum output current as a function of total ionizing dose of X and gamma radiation, were presented for Commercial-Off-The-Shelf lC's from two batches of each manufacturer.

Published in:

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Date of Conference:

19-23 Sept. 2005