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A new experimental technique is used to analyze the transient response of partially depleted SOI devices to pulsed laser irradiation. This new technique allows calibration of the deposited charge in the sensitive volume (i.e. the body region of the measured SOI transistors) and then the quantitative analysis of the device transient response. In particular 50-nm gate length SOI transistors have been tested with the pulsed laser, and their response is compared to 0.25-mum partially depleted SOI transistors. The transient current and the collected charge are investigated as a function of the supply voltage for both types of SOI devices. The technology' optimization for low leakage or high performance applications is shown to have large effects on the SOI device sensitivity.