By Topic

High-Temperature Tunneling Quantum-Dot Intersublevel Detectors for Mid-Infrared to Terahertz Frequencies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

Quantum-dot infrared photodetectors have emerged as attractive devices for sensing long wavelength radiation. Their principle of operation is based on absorption of radiation via intersublevel transitions in quantum dots. Multiple layers of self-organized ln(Ga)As/Ga(Al)As quantum dots are generally incorporated in the active region of these devices. Three-dimensional quantum confinement allows normal incidence operation. This paper describes a novel variation in the design of these devices which allows a significant reduction of the dark current, high temperature operation and extension of operation to terahertz frequencies. The principle of operation and operating characteristics of this device - the tunnel quantum-dot intersublevel detector - are described. Operation is demonstrated from 6-80 mum at temperatures up to 300 K with acceptable values of peak responsivity (0.1-0.75 A/W) and specific detectivity (107-1011cm ldr Hz1/2/W-1 , depending on temperature and wavelength).

Published in:

Proceedings of the IEEE  (Volume:95 ,  Issue: 9 )