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In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 m15 m InP HBT device with maximum frequency of oscillation greater than 500 GHz. The passive components of the oscillator are realized in a two metal process with benzocyclobutene used as the primary transmission line dielectric. The oscillator is implemented in a common base topology due to its inherent instability. The design includes an on-chip resonator, output matching circuitry, and injection locking port. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Additionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. This is the first fundamental HBT oscillator operating above 300 GHz.