Cart (Loading....) | Create Account
Close category search window
 

Electrical and Reliability Studies of “Wet  \hbox {N}_{2}\hbox {O} ” Tunnel Oxides Grown on Silicon for Flash Memory Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Babu, P.N. ; Taiwan Semicond. Manuf. Co., Hsinchu ; Govind, G. ; Prasad, S.M.S. ; Bhat, K.N.

In this paper, we report the electrical characteristics and reliability studies on tunnel oxides fabricated by "wet N2O" oxidation of silicon in an ambient of water vapor and N2O at a furnace temperature of 800 degC. Tunnel oxides that have an equivalent oxide thickness of 67 A are subjected to a constant-current stress (CCS) amount of -100 mA/cm2 using a MOS capacitor to obtain information on stress-induced leakage current (SILC), interface, and bulk trap generation. The obtained results clearly demonstrate the superior performance features of the present tunnel oxides with reduced SILC, lower trap generation, minimum change in gate voltage, and higher charge-to-breakdown during CCS studies. X-ray photoelectron spectroscopy depth profile studies of the tunnel oxide interfaces have shown that the improved performance characteristics and reliability can be attributed to the incorporation of about 8.5% nitrogen at the oxide-silicon interface of the samples formed by the "wet N2O" process that involves low-temperature oxidation and annealing at 800 degC.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:7 ,  Issue: 3 )

Date of Publication:

Sept. 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.