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Flexfet: Independently-Double-Gated SOI Transistor With Variable Vt and 0.5V Operation Achieving Near Ideal Subthreshold Slope

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5 Author(s)
Wilson, D. ; American Semicond. Inc., Boise, ID ; Hayhurst, R. ; Oblea, A. ; Parke, S.
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Manufacture of Flexfettrade CMOS with excellent dynamic threshold control has been demonstrated. Flexfettrade transistors operating at 0.5 V in DG mode have demonstrated a near ideal subthreshold slope of 64 mV/decade and an Ion/Ioff ratio of 106. In IDG mode, the Flexfettrade bottom gate provides a wide range of dynamic Vt adjustment enabling flexible device configurability for future ultra-low-power designs.

Published in:

SOI Conference, 2007 IEEE International

Date of Conference:

1-4 Oct. 2007

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