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RF Power NLDMOS Technology Transfer Strategy from the 130nm to the 65nm node on thin SOI

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7 Author(s)

Thin film SOI is a key technology for wireless and RF applications. We demonstrate the successful transfer of a DriftMOS transistor from the 130 nm technology to the 65 nm one on thin SOI. The process option introduced in this node enables to achieve high device performance: due to the new well patterning strategy, the main transistor figure of merit is improved.

Published in:

SOI Conference, 2007 IEEE International

Date of Conference:

1-4 Oct. 2007