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Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors

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8 Author(s)
Lixin Ge ; Austin Silicon Technol. Solutions, Freescale Semicond. Inc., Austin, TX ; Adams, V. ; Loiko, K. ; Tekleab, D.
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We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained etch stop layer (ESL) stressors. The model is based on 2-dimensional (2D) finite element (FEM) stress simulations and 4-point bending characterization of silicon, and agrees well with measured data. The impact of PSEs on circuit performance is also discussed.

Published in:

SOI Conference, 2007 IEEE International

Date of Conference:

1-4 Oct. 2007