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A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems

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9 Author(s)
Jonathan P. Comeau ; School of Electrical and Computer Engineering, Georgia Institute of Technology, 85 5th Street NW, Atlanta, GA 30308 USA. Email: comeau.jon@gmail.com / Tel: (404) 385-6403 / Fax: (404) 894-0222 ; Matt A. Morton ; Wei-Min Lance Kuo ; Tushar Thrivikraman
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This work presents a 5-bit receiver for X-band phased-array radar applications based on a commercially-available silicon-germanium (SiGe) BiCMOS technology. The receiver achieves a gain of 11 dB, an operational bandwidth from 8.0 to 10.7 GHz, an average noise figure of 4.1 dB, and an input-referred third-order intercept point (IIP3) of-13 dBm, while only dissipating 33 mW of power. The receiver also provides 32 distinct phase states from 0 to 360deg, with an rms phase error < 9deg. This level of circuit performance and integration capability demonstrates the benefits of SiGe BiCMOS technology for emerging radar applications, making it an excellent candidate for integrated X-band phased-array radar transmit/receive modules.

Published in:

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Date of Conference:

Sept. 30 2007-Oct. 2 2007