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We report record fmax for a silicon-based transistor, and the first combined set of f1+ fmax above one-terahertz for silicon-germanium heterojunction bipolar transistors (SiGe HBTs). Peak fmax of 618 GHz and frfloor of 463 GHz at 4.5 K (chuck temperature) were measured for a scaled 0.12 times 2.5 mum-SiGe HBT (343 / 309 GHz at 300 K), at a breakdown voltage BVCEO of 1.62 V (1.70 at 300 K), yielding a record fT x BVCEO product of 750 GHz-V (510 GHz-V at 300 K). An examination of base transport in these devices at low temperatures suggests non-equilibrium effects are operative.
Date of Conference: Sept. 30 2007-Oct. 2 2007