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Ultra Temperature-Stable Bulk-Acoustic-Wave Resonators with SiO 2 Compensation Layer

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4 Author(s)

This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/degC at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO2 on a surface micromachined cantilever that is released by XeF2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO2/Si/SiO2 supporting substrate.

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IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control  (Volume:54 ,  Issue: 10 )