Ge Photodetectors Integrated with Waveguides for Electronic-Photonic Integrated Circuits on CMOS Platform

Ge p-i-n photodetectors monolithically integrated with silicon oxynitride and silicon nitride waveguides on Si CMOS platform are presented. The devices demonstrated high efficiency (1.08A/W) and high-speed (≫ 14 Gbit/s) performances at low bias.