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High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si0.8Ge0.2 Buffer by Ultra-High-Vacuum Chemical Vapor Deposition

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9 Author(s)
Ter-Hoe, Loh ; Institute of Microelectronics, 11 Science Park Rd, Science Park-II, Singapore (117685) ; Jian, Wang ; Hoai-Son, Nguyen ; Ramana, Murthy
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Ge/SiGe/SOI PIN photodiodes with 15~17GHz bandwidth at 1550nm, external quantum efficiency of 20%~27% at 850nm, and bulk dark current density of 1.5~2mA/cm2, using low temperature Si0.8Ge0.2 buffer and without cyclic annealing were demonstrated.

Published in:

Group IV Photonics, 2007 4th IEEE International Conference on

Date of Conference:

19-21 Sept. 2007