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The Effect of Negative Direct Current Bias on the Crystallization of nc-Si:H Films Prepared by Plasma Enhanced Chemical Vapor Deposition

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3 Author(s)
J. -H. Shim ; Department of Materials Science and Engineering, Inha University, Inchon 402-751, Korea ; N. -H. Cho ; E. H. Lee

Nanocrystalline Si thin films were prepared by PECVD. The effect of negative DC biases on the formation of Si nanocrystallites in the films and relevant optical features was investigated.

Published in:

2007 4th IEEE International Conference on Group IV Photonics

Date of Conference:

19-21 Sept. 2007