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Effect of ion-irradiation induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide

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3 Author(s)
Hoon Jeong ; Dept. of Phys., Korea Adanced Inst. of Sci. & Technol., Daejeon ; Se-Young Seo ; Shin, Jung H.

We found that the initial presence of defects induced by ion-irradiation reduces the fraction of Er ions that can be excited via nanocluster silicon (nc-Si) even after their removal via high-temperature annealing.

Published in:

Group IV Photonics, 2007 4th IEEE International Conference on

Date of Conference:

19-21 Sept. 2007