Referenced Items are not available for this document.
Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.
Published in:
Group IV Photonics, 2007 4th IEEE International Conference on
Date of Conference: 19-21 Sept. 2007
- Page(s):
- 1 - 3
- Print ISBN:
- 978-1-4244-0934-1
- INSPEC Accession Number:
- 10089360
- Conference Location :
- Tokyo
- Digital Object Identifier :
- 10.1109/GROUP4.2007.4347664
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
