Referenced Items are not available for this document.
Large-scale fabrication processes of high-power single-lateral-mode laser diodes (LDs) have been successfully demonstrated for the first time using 4-inch-wafer process technology. An excellent uniformity of the LD characteristics is obtained over an 88-mm-diameter area of the 4-inch wafer with small deviation, e.g., sigma/ave. = 3.5% (ave. plusmn sigma = 73.5 plusmn 2.6 mA) for the threshold current, and sigma/ave. = 0.12% (658.00 plusmn 0.79 nm) for the peak wavelength. The LDs show stable and kink-free high-power operation over 400 mW even at a high temperature of 75degC with an operation current of 600 mA.
Published in:
Selected Topics in Quantum Electronics, IEEE Journal of
(Volume:13
,
Issue:
5
)
Date of Publication: Sept.-oct. 2007
- Page(s):
- 1170 - 1175
- ISSN :
- 1077-260X
- INSPEC Accession Number:
- 9630307
- Digital Object Identifier :
- 10.1109/JSTQE.2007.903488
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 15 October 2007
- Issue Date :
- Sept.-oct. 2007
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
