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New Design Approach to minimise IMD Asymmetry and IM3 products in Microwave FETs

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4 Author(s)
P. Colantonio ; Electronic Engineering Department of the University of Rome Tor Vergata, via del Politecnico n°1, 00133 Rome, Italy, +390672597346 ; F. Giannini ; E. Limiti ; A. Nanni

The minimisation of asymmetry between the lower and upper side band intermodulation products is discussed in the first part of this contribution using a Volterra series analysis. From the inferred relationships, not only the base band but also the harmonic device terminations effects were analysed, establishing new conditions to minimise the IMD asymmetry. Under these conditions and following the Volterra approach, also the IM3 products were minimized through a suitable second harmonic load selection as verified by nonlinear simulations on a HEMT device model. This approach allows to avoid complex linearization schemes in the base band frequencies obtaining similar results and simpler design.

Published in:

2006 International Conference on Microwaves, Radar & Wireless Communications

Date of Conference:

22-24 May 2006