By Topic

High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Ryu, H.Y. ; Samsung Adv. Inst. of Technol., Suwon ; Ha, K.H. ; Lee, S.N. ; Jang, T.
more authors

The authors report on the high-performance blue laser diodes (LDs) with an emission wavelength of ~448 nm employing InGaN single-quantum-well (QW) active layers. At 100-mW continuous-wave (CW) output power, operation current and voltage are, respectively, 150 mA and 5.3 V, corresponding to the wall plug efficiency of >12%, a record value for the single-mode InGaN LDs with blue wavelengths. The single QW blue LD showed normal temperature dependence of light output-current curves with the characteristic temperature of 170 K. In addition, we demonstrate a high level of catastrophic optical damage of >300 mW and long device lifetime under CW operation condition at room temperature.

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 21 )