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An Integrated 1.2V-to-6V CMOS Charge-Pump for Electret Earphone

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4 Author(s)
Chun-Yen Tseng ; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Tel.+886 3 5162203, Fax.+886 3 5715971, ; Shih-Chieh Chen ; Tim K. Shia ; Po-Chiun Huang

This work proposes a new charge pump design that achieves a high set-up ratio for electret earphone driving circuits. The voltage pumping cell is based on Cockcroft-Walton topology to achieve small area with constant MOS capacitor value under low system voltage operation. A 6-V output voltage is regulated by a PFM-based loop. This loop includes a new switched-capacitor divider as a part of the sensing circuitry. All the components are integrated in a standard 0.18 mum CMOS. Measurement results show that with 1.2 V supply, the output voltage is around 6 V with 30 mV output ripple. The maximum output driving current is up to 0.7 mA.

Published in:

2007 IEEE Symposium on VLSI Circuits

Date of Conference:

14-16 June 2007