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A 5 kV HBM transformer-based ESD protected 5-6 GHz LNA

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6 Author(s)
Borremans, J. ; Vrije Univ. Brussel, Brussels ; Thijs, S. ; Wambacq, P. ; Linten, D.
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Integrated designs in deep-submicron CMOS require ESD protection for their I/O pins. Since CMOS scaling drastically lowers the breakdown voltage of a MOS transistor, the available design window for ESD protection is narrowing. An inductor-based ESD protection offers superb protection but is severely area consuming. In this paper we propose a transformer-based ESD protection for inductor-based LNAs. We demonstrate that the proposed technique offers excellent ESD protection and RF performance without the loss of area.

Published in:

VLSI Circuits, 2007 IEEE Symposium on

Date of Conference:

14-16 June 2007

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