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Proton and Heavy Ion Induced Semi-Permanent Upsets in Double Data Rate SDRAMs

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4 Author(s)
R. Koga ; The Aerospace Corporation, El Segundo, CA 90245 USA, telephone: 310-336-6583, e-mail: ; P. Yu ; S. Crain ; J. George

Semi-permanent upset sensitivity in DDR SDRAMs is investigated. A technique to reduce sensitivity is examined. The reduction extends to high LET regions for some heavy ion induced upsets.

Published in:

2007 IEEE Radiation Effects Data Workshop  (Volume:0 )

Date of Conference:

23-27 July 2007