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Dose Rate Upset Investigations on the Xilinx Virtex IV Field Programmable Gate Arrays

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7 Author(s)
Vera, A. ; Univ. of New Mexico, Albuquerque ; Llamocca, D. ; Pattichis, M. ; Kemp, W.
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The following paper describes the results of ionizing dose rate investigations into upset, supply photocurrent, latch-up, and burnout susceptibility of the Xilinx Virtex IV XC4VFX12. All investigations were performed on a commercial version of the device. The maximum no-upset dose rate was 2.8times108 rad(Si)/s. Photocurrent amplitudes as a function of dose rate were recorded.

Published in:

Radiation Effects Data Workshop, 2007 IEEE  (Volume:0 )

Date of Conference:

23-27 July 2007