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The radiation-sensitive field-effect transistor (RADFET) is a specialized design of metal-oxide-semiconductor field-effect transistor (MOSFET). This paper gives selected data on the response of REM RADFETs to ionizing radiation. The period extends from 1975 to the present. A wide variety of test beams was used. It includes gamma-ray sources, X-ray sources, medical LINACs, reactors and high-energy charged-particle accelerators. The responses and their measurement are mainly due to the growth of trapped oxide charge, represented by shift in the threshold voltage (VT). The dependence of charge growth with exposure bias and oxide thickness is described. Also described are instabilities such as room-temperature and isochronal annealing (known as "fade"), drift due to border states and the effect of radiation on the temperature coefficient of threshold voltage.