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For many applications of high-performance three- phase AC converters, silicon carbide (SiC) switching devices promise breakthroughs in performance and power density. The SiC JFET technology is maturing, and will likely be the first SiC power switch available for applications requiring blocking voltages on the order of 1 kV. In this paper, a 2 kW three-phase buck rectifier with 150 kHz switching frequency is presented. The SiC buck rectifier uses prototype 1200 V SiC JFETs, as well as SiC Schottky barrier diodes (SBDs). The fast switching and low loss of the SiC JFET enables the achievement of a high switching frequency that is difficult to achieve with traditional silicon devices.
Date of Conference: 17-21 June 2007