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Failure mechanisms of Trench IGBT under various short-circuit conditions

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4 Author(s)

Four short circuit electrical configurations leading to the Trench IGBT failures are studied in detail by the help a two dimensional physically-based device simulator. By analyzing different internal physical parameters, it was highlighted that the failure occurring during the turn-on is due to a high impact ionization generation rate, whereas the failures occurring during on- state, at the turn-off and the one occurring some microseconds after turn-off are due to a thermal runaway phenomenon.

Published in:

Power Electronics Specialists Conference, 2007. PESC 2007. IEEE

Date of Conference:

17-21 June 2007