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Failure mechanisms of Trench IGBT under various short-circuit conditions

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4 Author(s)
Benmansour, A. ; IMS - ENSEIRB, Talence ; Azzopardi, S. ; Martin, J.C. ; Woirgard, E.

Four short circuit electrical configurations leading to the Trench IGBT failures are studied in detail by the help a two dimensional physically-based device simulator. By analyzing different internal physical parameters, it was highlighted that the failure occurring during the turn-on is due to a high impact ionization generation rate, whereas the failures occurring during on- state, at the turn-off and the one occurring some microseconds after turn-off are due to a thermal runaway phenomenon.

Published in:
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE

Date of Conference: 17-21 June 2007

Page(s):
1923 - 1929
ISSN :
0275-9306
E-ISBN :
978-1-4244-0655-5
Print ISBN:
978-1-4244-0654-8
INSPEC Accession Number:
9831041
Conference Location :
Orlando, FL
Digital Object Identifier :
10.1109/PESC.2007.4342297
Product Type:
Conference Publications

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