By Topic

SiC JFET in Contrast to High Speed Si IGBT in Matrix Converter Topology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Daniel Domes ; Chemnitz University of Technology, Department of Electrical Machines and Drives, Reichenhainer Str. 70, 09107 Chemnitz, Germany. Phone: 0049 / 371 / 531-33346, Fax: -24219, Email: daniel.domes@etit.tu-chemnitz.de ; Wilfried Hofmann

The retrograde efforts in the field of silicon carbide (SiC) technology led to outstanding device parameters of high voltage unipolar devices. Overcoming silicon (Si) unipolar limits in SiC, currently the vertical JFET is the most serious active switch which seems to outperform all the established technology. With exemplaryly 48 Wan'3 the matrix converter is predicted to reach highest power densities in future using SiC devices [1][2]. But on the silicon side, 1200 V field-stop IGBTs with planar gate structure enabling operating frequencies in hard switching applications up to 100 kHz, too [3]. In this paper the conduction and switching behaviour of both transistor types is analyzed with respect to the matrix converter demands. The combination of measured data and a particular simulation gives results in terms of power losses and efficiency.

Published in:

2007 IEEE Power Electronics Specialists Conference

Date of Conference:

17-21 June 2007